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Electroluminescence in amorphous silicon

 

作者: J. I. Pankove,   D. E. Carlson,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 29, issue 9  

页码: 620-622

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.89165

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Electroluminescence has been obtained in forward‐biasedp‐i‐ndiodes, and also in Schottky barrier diodes fabricated from discharge‐produced amorphous Si. The emission at 78 °K in both electroluminescence and photoluminescence peaks at 1.28±0.08 eV in a 0.2‐eV broad band with an external quantum efficiency of ∼10−3.

 

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