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Properties and structure of coevaporated NbSi2

 

作者: Wu Guoying,   Zhang Guobing,   Wang Yang Yuan,   Xu Wei,   Li Yong Hong,   C. G. Hopkins,   M. D. Strathman,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 6  

页码: 1702-1706

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.582939

 

出版商: American Vacuum Society

 

关键词: ANNEALING;CRYSTAL STRUCTURE;CRYSTAL GROWTH;VERY HIGH TEMPERATURE;NIOBIUM SILICIDES;TRANSMISSION ELECTRON MICROSCOPY;ELECTRIC CONDUCTIVITY;GRAIN SIZE;GRAIN GROWTH;NbSi2

 

数据来源: AIP

 

摘要:

This paper will investigate the properties and structure of coevaporated NbSi2under a variety of annealing times and temperatures. Data from transmission electron microscopy (TEM)insituvacuum annealing, conventional furnace annealing, and infrared rapid thermal annealing will be presented. The temperatures in this study ranged from room temperature to 950 °C for these annealing techniques. The results obtained in this work will be contrasted to those obtained for other interconnect materials such as polysilicon and refractory metal silicides.

 

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