Deep level spectroscopy inp‐GaSe single crystals
作者:
G. Micocci,
P. Siciliano,
A. Tepore,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 10
页码: 6581-6582
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345090
出版商: AIP
数据来源: AIP
摘要:
Deep levels have been examined in nonintentionally dopedp‐type gallium selenide single crystals using photoinduced current transient spectroscopy measurements. Two hole trapping levels at 0.20 and 0.80 eV above the valence band have been observed and the corresponding thermal capture cross section evaluated. The possible origin and nature of these centers are also discussed.
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