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Ellipsometric profiling of HgCdTe heterostructures

 

作者: W. V. McLevige,   J. M. Arias,   D. D. Edwall,   S. L. Johnston,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 5  

页码: 2483-2486

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585723

 

出版商: American Vacuum Society

 

关键词: MERCURY TELLURIDES;CADMIUM TELLURIDES;ELLIPSOMETRY;HETEROSTRUCTURES;ETCHING;QUANTITATIVE CHEMICAL ANALYSIS;(HgCd)Te

 

数据来源: AIP

 

摘要:

The application of ellipsometry in conjunction with step etching is demonstrated for determining compositional profiles of Hg1−xCdxTe heterostructures. Measurements of the ellipsometric ψ parameter can be directly correlated with composition,x, for 0.2

 

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