High reverse voltage amorphous siliconp‐i‐ndiodes
作者:
T. Pochet,
J. Dubeau,
B. Equer,
A. Karar,
L. A. Hamel,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 3
页码: 1340-1344
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346704
出版商: AIP
数据来源: AIP
摘要:
New types ofa‐Si:Hp‐i‐ndiodes, capable of sustaining high reverse electric fields up to 6×105V/cm with very low leakage currents, have been designed specifically for charged particle detection. Because of the low hole mobility and lifetime in this type of material, very high applied fields are required to collect a large fraction of the charge carriers generated by an ionizing particle. Since the leakage current is shown to be essentially due to electron tunneling through thep‐doped layer, the new design includes a thickerplayer (300 nm) at the expense of an increased surface leakage current. An appropriate etching of the top doped layer around the electrode is then required to eliminate such currents. A model, taking into account the doped layer conductivities, is presented to roughly compare the reverse current‐voltage characteristics of the samples before and after etching.
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