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Arsenic‐induced intensity oscillations in reflection high‐energy electron diffraction measurements

 

作者: B. F. Lewis,   R. Fernandez,   A. Madhukar,   F. J. Grunthaner,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 2  

页码: 560-563

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583432

 

出版商: American Vacuum Society

 

关键词: MOLECULAR BEAM EPITAXY;IMPURITIES;DOPING PROFILES;GALLIUM ARSENIDES;INDIUM ARSENIDES;RHEED;CHEMICAL COMPOSITION;EPITAXIAL LAYERS;ARSENIC;OSCILLATIONS;GaAs;InAs

 

数据来源: AIP

 

摘要:

A technique of arsenic‐induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 °C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenicactuallyincorporatedintothegrowingfilmand does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

 

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