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An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substrates

 

作者: S. Guha,   A. Madhukar,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 73, issue 12  

页码: 8662-8664

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.353353

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An explanation of the interfacet migration behavior observed in molecular beam epitaxical growth of GaAs and AlGaAs on patterned GaAs(100) substrates is presented on the basis of the nature of the ledge–ledge interaction.

 

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