Kinematic theory of ballistic electron emission spectroscopy of silicon–silicide interfaces
作者:
M. D. Stiles,
D. R. Hamann,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 4
页码: 2394-2398
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585709
出版商: American Vacuum Society
关键词: COBALT SILICIDES;NICKEL SILICIDES;INTERFACES;ELECTRON SPECTROSCOPY;BALLISTICS;ELECTRON MICROSCOPY;ELECTRON EMISSION;ELECTRONIC STRUCTURE;CONDUCTION BANDS;ENERGY−LEVEL DENSITY;CoSi;NiSi;Si
数据来源: AIP
摘要:
The electronic structure of the materials being measured has a strong effect on the spectroscopy of the interface between them measured by ballistic electron emission microscopy (BEEM). Specific calculations for CoSi2/Si(111) and NiSi2/Si(111) based on the calculated band structures of the materials illustrate some of the observable effects due to band structures, particularly of the overlayer. The BEEM spectra for CoSi2/Si(111) show a delayed onset due to a mismatch of the states near the conduction band minimum in the Si. The spectra for NiSi2/Si(111) show structure due to a decrease in the density of states in the NiSi2at ∼1.8 eV above the Fermi level.
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