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PMIPK–azide dry‐developable resist in electron beam lithography

 

作者: Minoru Tsuda,   Setsuko Oikawa,   Mitsuo Yabuta,   Akira Yakota,   Hisashi Nakane,   Kazuhiro Yamashita,   Kenji Gamo,   Susumu Namba,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 2  

页码: 481-484

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.583303

 

出版商: American Vacuum Society

 

关键词: LITHOGRAPHY;ELECTRON BEAMS;PHOTORESISTS;SCATTERING;BACKSCATTERING;RESOLUTION;ETCHING;MULTILAYERS;MASKING

 

数据来源: AIP

 

摘要:

Dry development of fine resist patterns in e‐beam lithography is described. The best resolution obtained is 100 nm in the monolayer process. The electron sattering effects are essential in the limitation of the resolution. The possible application of dry development in e‐beam lithography which overcomes the backscattering limitations is a multilayer resist which gives 100‐nm line and 200‐nm space dry developed patterns by a conventional e‐beam exposure apparatus.

 

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