Ion impact etch anisotropy downstream from diffusion plasma sources
作者:
M. J. Goeckner,
J. Goree,
T. E. Sheridan,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1991)
卷期:
Volume 9,
issue 6
页码: 3178-3180
ISSN:0734-2101
年代: 1991
DOI:10.1116/1.577142
出版商: American Vacuum Society
关键词: ANISOTROPY;ETCHING;ION TEMPERATURE;PLASMA SOURCES;ION BEAMS;SUBSTRATES;FLUORESCENCE;ELECTRON CYCLOTRON−RESONANCE
数据来源: AIP
摘要:
Plasma processing in chambers located downstream from a source are gaining widespread use because they allow etching and deposition with minimal damage. This minimized damage, however, is achieved by using a low ion impact energy, which can lead to a poorer etch anisotropy. The best anisotropy for a given impact energy requires the lowest possible ion temperature. Laser‐induced fluorescence measurements show that room temperature ions can be attained using a multidipole‐confined discharge. In comparison, ion temperatures downstream from electron cyclotron resonance sources are much hotter, according to recent reports.
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