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Dual implants in InGaAs

 

作者: Mulpuri V. Rao,   F. Moore,   H. B. Dietrich,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 68, issue 7  

页码: 3763-3765

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.346298

 

出版商: AIP

 

数据来源: AIP

 

摘要:

P/Be and Ar/Be dual implantations were performed into In0.53Ga0.47As. Significantly higher Be dopant activation was obtained for P/Be dual implantation compared to Be implantation. Lower dopant activation was obtained for Ar/Be dual implantation. Be in‐diffusion during annealing is reduced for both P/Be and Ar/Be dual implantations.

 

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