Electron‐Bombardment Induced Recombination Centers in Germanium
作者:
J. J. Loferski,
P. Rappaport,
期刊:
Journal of Applied Physics
(AIP Available online 1959)
卷期:
Volume 30,
issue 8
页码: 1181-1183
ISSN:0021-8979
年代: 1959
DOI:10.1063/1.1735289
出版商: AIP
数据来源: AIP
摘要:
The rate of change of minority carrier lifetime in germanium crystals bombarded by 1‐Mev electrons has been studied experimentally as a function of the initial resistivity of the material. Analysis of the data leads to the conclusion that a single recombination center controls lifetime in bothn‐ andp‐type material, that this level is located at either 0.21±0.005 ev from the conduction band or else at 0.26±0.005 ev from the valence band, and that the ratio of the cross section for capture of minority holes is 18 times the cross section for capture of minority electrons. The absolute value of the hole capture cross section is 4.5×10−15cm2if one uses the best available data for the probability of producing a Frenkel defect by a 1‐Mev electron. This large value is compared to the findings of other authors in similar experiments.
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