The onset of plastic yield in undoped and highly indium‐doped GaAs, prepared by liquid encapsulated Czochralski (LEC) growth, has been determined by uniaxial compression tests over the temperature range 250–600 °C. No distinguishable difference in yield stress is observed between undoped and indium‐doped GaAs; however, LEC GaAs exhibits a modest increase in yield strength over undoped Bridgman‐grown material. The absence of a significant increase in the yield strength of indium‐doped over undoped LEC GaAs implies that the mechanism by which indium reduces the dislocation density in GaAs is significantly effective only at temperatures near the melting point.