A direct write electron beam lithography system has been constructed which is capable of writing 0.5 μm VHSIC patterns at a rate of 4 to 25 four−inch wafer levels per hour. The several key subsystems which permit this increase in performance over existing systems are (1) A variable shaped beam which exposes rectangular or triangular shapes from 0.5 to 2.0 μm in size at a current density up to 200 A/cm2; (2) an all digital, 100 MHz pattern generator with optical couplers for high speed, low noise data processing; (3) a unique deflection system with specially designed 18 bit digital to analog converters and ultralinear amplifiers; (4) a mechnaical state capable of 10 cm/s speed and 0.8 g acceleration, under microprocessor control, providing write‐while‐moving capability and synchronization with the pattern generator; and (5) a wafer handler system for cassette‐to‐cassette input/output; and (6) a complimentary software package which constructs files with the necessary data compaction for rapid transmission and proximity correction for proper exposure.