We report Raman scattering study on InN single crystalline films with wurtzite form. The films were grown on sapphire substrates by microwave‐excited metalorganic vapor phase epitaxy and optical phonon properties of the films were investigated. BothA1(LO) andE2(2)peaks, which are related to a longitudinal optical phonon mode and a doubly degenerated mode, respectively, were observed at 596 cm−1with the full width of 36 cm−1at half maximum intensity and at 495 cm−1with the full width of 20 cm−1at half maximum intensity. ©1996 American Institute of Physics.