THE MAGNETOSTRICTION OF SILICON‐DOPED YTTRIUM IRON GARNET (YIG)
作者:
J. F. Dillon,
E. M. Gyorgy,
J. P. Remeika,
期刊:
Applied Physics Letters
(AIP Available online 1966)
卷期:
Volume 9,
issue 4
页码: 147-148
ISSN:0003-6951
年代: 1966
DOI:10.1063/1.1754685
出版商: AIP
数据来源: AIP
摘要:
The magnetostriction constants &lgr;100and &lgr;111have been measured at room temperature for YIG single crystals in which a small fraction of the iron ions are replaced by silicon. The magnetically active impurity is believed to be divalent iron which compensates the Si4+. As the silicon concentration reaches about 0.05 Si atoms/Y3Fe5O12, both &lgr;'s pass through zero. In crystals of this composition the magnetization is largely decoupled from the strain distribution in the crystal. A peak in low‐frequency permeability and simple easily interpreted domain structures correspond to this &lgr; = 0 composition.
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