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THE MAGNETOSTRICTION OF SILICON‐DOPED YTTRIUM IRON GARNET (YIG)

 

作者: J. F. Dillon,   E. M. Gyorgy,   J. P. Remeika,  

 

期刊: Applied Physics Letters  (AIP Available online 1966)
卷期: Volume 9, issue 4  

页码: 147-148

 

ISSN:0003-6951

 

年代: 1966

 

DOI:10.1063/1.1754685

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The magnetostriction constants &lgr;100and &lgr;111have been measured at room temperature for YIG single crystals in which a small fraction of the iron ions are replaced by silicon. The magnetically active impurity is believed to be divalent iron which compensates the Si4+. As the silicon concentration reaches about 0.05 Si atoms/Y3Fe5O12, both &lgr;'s pass through zero. In crystals of this composition the magnetization is largely decoupled from the strain distribution in the crystal. A peak in low‐frequency permeability and simple easily interpreted domain structures correspond to this &lgr; = 0 composition.

 

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