Surface morphology of epitaxial CaF2films on Si substrates
作者:
R. W. Fathauer,
L. J. Schowalter,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 5
页码: 519-521
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95299
出版商: AIP
数据来源: AIP
摘要:
The surfaces of epitaxial CaF2layers grown on (100) and (111) Si by molecular beam epitaxy have been studied using scanning electron microscopy. The (111) surface exhibits small triangular hillocks, while the (100) surface exhibits a columnar structure. This latter structure can be accounted for by the prohibitively large free energy of the (100) surface. A dipole moment exists perpendicular to this surface which causes the electrostatic energy to diverge. This phenomenon explains the inferior (100) growth as compared to (111) and has important implications for possible applications of group II‐A fluoride/semiconductor epitaxial structures.
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