We have investigated the effects of boron doping on the electrical properties of glow‐discharge amorphous silicon (a‐Si:H) films prepared at a high‐deposition rate (HDR), comparing these effects with those of lower rates. The HDRa‐Si:H showed a higher doping efficiency, i.e., a larger portion of substitutionally doped boron than the other films by means of dark conductivity, activation energy measurements and quantitative analysis of boron. It also showed that the minimum B2H6to SiH4ratio which changes the film from intrinsic top‐type in photoconductivity is one order of magnitude smaller than that for dark conductivity.