SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications
作者:
M. Lim,
J.W. Bacon,
L.D. McMillan,
C.A. Paz De Araujo,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 27,
issue 1-4
页码: 71-80
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908228457
出版商: Taylor & Francis Group
关键词: MFISFET;NDRO memory;ferroelectric memory;retention;MOD
数据来源: Taylor
摘要:
SrBi2Ta2O9based Ferroelectric FETs with a CeO2buffer layer deposited by Metal Organic Decomposition (MOD) were fabricated on p-Si (100) substrate and analyzed in detail. The hysterisis curve (drain current vs. gate voltage) of the FET shows the counter-clockwise direction, which demonstrates the change of channel conductivity due to the ferroelectric polarization. The memory window with the gate voltage of ±10V was 2V. The difference of current ratio of Ids(on)to Ids(off)was 5∼7 orders in magnitude which is easily sensed by sense amplifiers. The charges of “on” state stored decay logarithmically with time without severe initial loss of data. This indicates the FET-FeRAM can be implemented in NDRO applications.
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