Some Characteristics of Lithium‐Drifted Silicon Structures
作者:
N. A. Baily,
W. M. Akutagawa,
R. J. Andres,
H. L. Montano,
期刊:
Journal of Applied Physics
(AIP Available online 1967)
卷期:
Volume 38,
issue 10
页码: 3907-3912
ISSN:0021-8979
年代: 1967
DOI:10.1063/1.1709039
出版商: AIP
数据来源: AIP
摘要:
Collection efficiency for carriers generated by visible light and potential path distributions have been studied inp‐i‐nstructures formed fromp‐type silicon after compensation by the lithium drift method. The experimental results show that the characteristics of the resultant devices are similar to those expected when an excess donor concentration excists in the compensated region. The effects of high‐field, reverse‐bias, room‐temperature storage indicate that a reduction in the donor concentration takes place under these conditions, resulting in a device behaving more like ap‐i‐nstructure.
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