The transport roles of electron‐electron (e‐e) and intravalley impurity scattering (neutral and ionized) inn‐Si at 77 K were studied under high‐electric‐field (0–3000 V/cm) nonequilibrium conditions, by comparing the theoretical and experimental ratio of ⟨111⟩ to ⟨100⟩ field‐dependent conductivity over a range of free‐electron concentrations that fully encompasses this ratio’s variation with concentration (2×1013–2×1016cm−3). Theoretical calculations were performed using a numerical technique which allows an ’’exact’’ solution to the Boltzmann transport equation. Electron‐electron scattering was included in the calculation using the Fokker‐Plank formulation. It was found that e‐e scattering was primarily responsible for the decrease in the conductivity ratio with increasing concentration through its effect on repopulation; both intravalley and intervalley e‐e scattering were found to be important. Neutral impurity scattering also had a significant effect on repopulation. An apparent increase in free‐electron concentration with field was observed in the more heavily doped samples.