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High‐Stress Low‐Temperature Dislocation Kinetics of Ge

 

作者: O. W. Johnson,  

 

期刊: Journal of Applied Physics  (AIP Available online 1965)
卷期: Volume 36, issue 10  

页码: 3247-3250

 

ISSN:0021-8979

 

年代: 1965

 

DOI:10.1063/1.1702958

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Measurements of dislocation velocities in Ge crystals below 325°C are reported, at resolved shear stresses as high as 60kg/mm2. No drastic departures from known behavior at higher temperatures and lower stresses were observed. No statistically significant change in activation energy due to applied stress was detected, suggesting that dislocation motion under these conditions is probably limited by Peierls' forces.

 

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