Crystallization behavior of alkoxy- derived SrBi2Ta2O9thin films on Pt-passivated Si
作者:
Kazumi Kato,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 26,
issue 1-4
页码: 243-251
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215625
出版商: Taylor & Francis Group
关键词: SrBi2Ta2O9thin film;low-temperature crystallization;triple-alkoxide precursors;a mixture of water vapor and oxygen flow during the calcination
数据来源: Taylor
摘要:
Initiation of the crystallization of the triple-alkoxy-derived gel films to SrBi2Ta2O9(SBT) perovskite thin films on Pt-passivated Si was addressed. The organic functional group of the triple alkoxide may determine the degree of the hydrolysis and poly-condensation reactions and affect the nucleation sites in the film after annealing. A mixture of water vapor and oxygen flow during the calcination at 250°C promoted the nucleation and growth of SBT below 500°C. It was clarified that the crystallographic orientaion of the SBT thin films has been determined in the primary stage of the crystallization.
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