We report a study of the saturated light‐induced defect densityNs,satin 37 hydrogenated (and in part fluorinated) amorphous silicon [a‐Si:H(F)] films grown in six different reactors under widely different conditions.Ns,satwas attained by exposing the films to light from a krypton ion laser (&lgr;=647.1 nm).Ns,satis determined by the constant photocurrent method and lies between 5×1016and 2×1017cm−3.Ns,satdrops with decreasing optical gapEoptand hydrogen contentcH, but is not correlated with the initial defect densityNs,annor with the Urbach tail energyEu. We discuss our results within the framework of existing models for light‐induced defects.