Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer
作者:
J. Almeida,
C. Coluzza,
T. dell’Orto,
G. Margaritondo,
A. Terrasi,
J. Ivanco,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 1
页码: 292-296
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.363847
出版商: AIP
数据来源: AIP
摘要:
We report a modification by thin silicon nitride intralayers of the Au/n-GaAs(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon–nitrogen mixture plasma. The nitridation was performed at a beam energy <40 eV, with 573 K sample temperature. Gold was deposited to studyin situthe Schottky barrier formation process with x-ray photoelectron spectroscopy. Internal photoemission spectroscopy and current–voltage measurements were used to evaluate the barrier modification on fully formed interfaces. Such a modification was analyzed in terms of theoretical calculations of the dipole created by the substrate–intralayer bonds. ©1997 American Institute of Physics.
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