Determination of Laplace—Poisson domain interface within semiconductor devices
作者:
J.A.Magowan,
W.D.Ryan,
A.Armstrong,
期刊:
Proceedings of the Institution of Electrical Engineers
(IET Available online 1970)
卷期:
Volume 117,
issue 5
页码: 921-926
年代: 1970
DOI:10.1049/piee.1970.0182
出版商: IEE
数据来源: IET
摘要:
A method is described for locating the interface boundary between the space-charge-neutral regions in semiconductor devices. This is based on a two-dimensional S.O.R. solution of Poisson's equation for complete depletion within the space-charge region and Laplace's equation within the neutral region. Applications of this 2-dimensional analytical technique are considered, and particular reference is made to the junction field-effect transistor and the metal-oxide-silicon transistor.
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