The photoreflection method is applied to detailed characterization of the ion implanted silicon carbide. Experimentally and theoretically, it is shown that the photoreflection method can be an effective tool for the determination of the dose of implantation and the depth of the implanted layer. It is demonstrated that the photoreflection method also has a high sensitivity to the measurement of optical parameters of the implanted layer. Experimental results are presented for the case of Lely grown 6H–SiC crystals implanted by 37 keVHe+ions. ©1997 American Institute of Physics.