Plasma‐polymerized resist films (PPMS) based on methylsilane have high sensitivity to short wavelength radiation. The photoinduced oxidation of PPMS films exposed in air forms siloxane network material, allowing dry development by selective rapid etching of the unexposed regions upon treatment with chlorine based plasmas. Negative‐tone patterns of oxidized methylsilane thus formed can be transferred through an underlying organic planarizing layer (0.7 μm) with excellent selectivity (≳100) to give high resolution patterns. This provides a versatile, dry photolithographic process usable with current exposure and etching tools that can be integrated into future cluster tool technologies. This article details the process tolerances and lithographic performance of PPMS under 248 nm exposure. Structures as small as 0.2 μm were printed with exposures ranging from 50 to 200 m cm−2on a GCA XLS DUV stepper. Promising results are also obtained over topography.