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Response to ‘‘Comment on ‘Generation phenomena of localized interface states induced by irradiation and post‐irradiation annealing at the Si/SiO2’ ’’ [J. Appl. Phys.77, 2223 (1995)]

 

作者: M. Kimura,  

 

期刊: Journal of Applied Physics  （AIP Available online 1995）
卷期: Volume 77, issue 5  

页码: 2224-2224

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.358809

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The accuracy of our measurements of the interface state [J. Appl. Phys.73, 4388 (1993)] is reassessed. The oxide thickness is found to be better than 1%, using techniques not only by high‐frequencyC‐Vand quasistaticC‐Vbut also by ellipsometry.

 

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