Regular step arrays on silicon
作者:
J. Viernow,
J.-L. Lin,
D. Y. Petrovykh,
F. M. Leibsle,
F. K. Men,
F. J. Himpsel,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 8
页码: 948-950
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120882
出版商: AIP
数据来源: AIP
摘要:
Highly regular arrays of steps are produced on vicinal Si(111)7×7. The step edges are atomically straight for up to2×104lattice sites. The terraces are single domain, which produces a minimum kink width of 2.3 nm (half a 7×7 unit cell) and thus a high barrier for creating kinks. Criteria for obtaining optimum step arrays are established, such as the miscut [≈1° towards (1¯1¯2)] and an annealing sequence which passes through step bunching regions quickly. ©1998 American Institute of Physics.
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