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A model for atomic mixing and preferential sputtering effects in SIMS depth profiling

 

作者: B. V. King,   I. S. T. Tsong,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1984）
卷期: Volume 2, issue 4  

页码: 1443-1447

 

ISSN:0734-2101

 

年代: 1984

 

DOI:10.1116/1.572380

 

出版商: American Vacuum Society

 

关键词: DEPTH PROFILES;SPUTTERING;MIXING;SIMS;SURFACE LAYERS;DIFFUSION;LAYERS;MATHEMATICAL MODELS;STOPPING POWER;ALGORITHMS

 

数据来源: AIP

 

摘要:

The development of altered surface layers due to preferential sputtering can be modeled by an algorithm based on the diffusion theory of atomic mixing using a depth‐dependent diffusion coefficient. Application of the model to typical SIMS depth profiles of buried layers indicates that the effects of atomic mixing and preferential sputtering can be separated by analysis of the shift and broadening of the measured peaks.

 

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