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Focused ion beam micromachining for transmission electron microscopy specimen preparation of semiconductor laser diodes

 

作者: J. Szot,   R. Hornsey,   T. Ohnishi,   S. Minagawa,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 2  

页码: 575-579

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586415

 

出版商: American Vacuum Society

 

关键词: LASER DIODES;GALLIUM PHOSPHIDES;INDIUM PHOSPHIDES;INDIUM PHOSPHIDES;ALUMINIUM PHOSPHIDES;CRYSTAL DEFECTS;TRANSMISSION ELECTRON MICROSCOPY;SAMPLE PREPARATION;ION MICROSCOPY;DEGRADATION;MACHINING;ION BEAMS

 

数据来源: AIP

 

摘要:

A new method based on focused ion beam micromachining of optoelectronic semiconductor microdevices for cross‐sectional transmission electron microscope analyses has been developed. Electron transparent areas in excess of 200 μm2have been fabricated. These enabled an investigation of the origins of structural defects in a prespecified submicron‐sized region of GaInP/AlGaInP‐based semiconductor laser diodes.

 

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