Polycrystalline Bi4Ti3O12thin films having perovskite structure were successfully produced on platinum coated silicon substrates by the sol‐gel technique. Crack‐free and crystalline films of 5000 A˚ thickness were fabricated by spinning and post‐deposition rapid thermal annealing treatment at 500 °C for 20 s. The films exhibited good structural, dielectric, and ferroelectric properties. The measured dielectric constant and loss factor at a frequency of 100 kHz were 180 and 0.014 and remanent polarization and coercive field were 5.4 &mgr;C/cm2and 135 kV/cm, respectively. The films showed good switching endurance under bipolar stressing at least up to 1010cycles.