Atomic configuration of segregated B on Si(001) surface
作者:
T. Komeda,
Y. Nishioka,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 16
页码: 2277-2279
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120049
出版商: AIP
数据来源: AIP
摘要:
The atomic configurations of segregated B atoms on a highly B-doped Si(001) surface is investigated with scanning tunneling microscopy (STM) observation and first-principle cluster calculation, on which characteristic comb-shape step structures are observed. The characteristic features in the STM image are (1) dark regions in the occupied state, and (2) paired protrusions in the unoccupied state. The calculation shows that models of a B dimer on the top surface and B atoms bonded to two neighboring Si atoms in a dimer row can reproduce STM images well for (1) and (2), respectively. ©1997 American Institute of Physics.
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