In0.53Ga0.47As and InP were grown on InP substrate by using dimeric molecules of arsenic and phosphorus. A Riber cracker cell and a laboratory designed gas cell were used. Cracking rate inside the two kinds of cells was studied by a modulation beam mass spectrometry technique (MBMS). Cracking rate up to 95% was obtained for the gas cell. The ratioM2/M4in the flux reaches 103. The use of As2species for In0.53Ga0.47As growth allows a saving of arsenic compared with As4species. A reduction of the incorporation rate of carbon is observed. Photoluminescence efficiency is increased by a factor of 5. PIN photodiodes exibit low dark current down to 25 nA at−10 V in As2grown InGaAs, 103less than in As4grown ternary material, on mesa diameter of 170 μm. We describe growth conditions of InP by using cracker cell and gas cell as phosphorus sources. Gas source seems to be a promising phosphorus source due to its large autonomy and hydrogen pressure which favors PH3recombination and impurities reduction.