The first‐order Raman scattering from heavily doped and highly compensated GaAs:Si has been measured with a constant impurity concentration of 1.1 × 1019cm−3. The dampedq=0L− andL+ branches due to the compensation‐limited low mobilities have been observed. The impurity‐induced forbidden mode which had been found in uncompensatedp‐GaAs:Zn has not appeared in the measured spectra. The line‐broadening of plasmon‐coupled LO phonon,L(q), and line and peak shift of TO phonon line are attributed to the impurity‐induced Fro¨hlich interaction and the self‐energy effect, respectively.