We analyze the excess‐carrier charge transport through the space‐charge region of a semiconducting electrode using a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material are used to describe the transport properties of that material. We give a brief review of the flux method and show that the results obtained using this approach for a semiconductor electrode reduce in a limiting case to those previously found by Ga¨rtner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method we treat the depletion layer more realistically by explicitly taking into account scattering and recombination processes which occur in this region.