Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric
作者:
C. W. Chen,
Y. K. Fang,
G. Y. Lee,
J. C. Hsieh,
M. S. Liang,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 10
页码: 1456-1458
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114493
出版商: AIP
数据来源: AIP
摘要:
Interface state generation in oxynitride gate dielectric devices with tungsten‐polycide (W‐polycide) and polycrystalline silicon (poly‐Si) gate structures were investigated. A significant amount of fluorine‐induced interface states were detected in W‐polycide gate device with nitridation of thermal gate oxide by both the charge pumping technique and capacitance/gate voltage (C/V) measurement. Re‐oxidation of oxynitride gate oxide results in partial annealing of these interface states. A model of the fluorine induced strain gradient between silicon dioxide and silicon (SiO2/Si) interface was proposed to explain the extra interface state generation mechanism. ©1995 American Institute of Physics.
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