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The Si/SiO2interface examined by cross‐sectional transmission electron microscopy

 

作者: J. Blanc,   C. J. Buiocchi,   M. S. Abrahams,   W. E. Ham,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 30, issue 2  

页码: 120-122

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89289

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thin (200–300 A˚) cross sections of Si/SiO2have been examined by transmission electron microscopy at a resolution of better than 10 A˚ to search for crystalline Si protrusions into, or islands in, the thermally grown SiO2. Within the resolution obtained, no evidence was found for any phase separation within the amorphous oxide layer.

 

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