High reflectivity of aluminum alloy layers causes degradation to occur in photoresist images through reflective light scattering. Titanium nitride used normally as a diffusion barrier under aluminum silicon contacts, can also be applied as an efficient antireflection layer on top of AlSi. Processing advantages over other antireflective layers (ARL) such as hillock suppression and enhanced electromigration resistance are also discussed. Process flow parameters from ARL deposition to wire attach are reviewed as applied to megabit dynamic random access memory development.