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Modulation‐doped Al0.48In0.52As/Ga0.47In0.53As photodetector prepared by molecular beam epitaxy

 

作者: C. Y. Chen,   Y. M. Pang,   A. Y. Cho,   K. Alavi,   P. A. Garbinski,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 2  

页码: 262-264

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582800

 

出版商: American Vacuum Society

 

关键词: photodetectors;fabrication;indium arsenides;molecular beam epitaxy;photoconductivity;electrodes;electron mobility;performance;energy gap;optical fibers;photoconductors;spectral response;photosensitivity;size;absorptivity;opacity;(Ga,In)As;(Al,In)As

 

数据来源: AIP

 

摘要:

We report a single‐period modulation‐doped Ga0.47In0.53As/Al0.48In0.52As photoconductive detector for long wavelength applications. This detector shows a high equivalent external quantum efficiency. Furthermore, we have also measured the receiver sensitivity of this detector. At 1 Gbits/s, 1.3 μm, and BER=10−9, the receiver sensitivity is −25 dBm. These results suggest that, through further developments, this detector should find applications in monolithic integrated photoreceivers.

 

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