Laplace based reconstruction of the carrier profile from spreading resistance measurements is adequate in the absence of carrier spilling effects provided the calibration curve is interpreted correctly through an appropriate constant (variable) contact radius and (zero) barrier calibration. It will be shown that serious disagreement between secondary ion mass spectroscopy (SIMS) and SRP profiles can arise solely due to the incorrect choice of these parameters. A universal barrier and radius calibration procedure is described which removes the above discrepancies, is applicable top‐ as well asn‐type material, for any type of calibration curve and generates accurate profiles in agreement with SIMS (also forp p+‐layers) and correct sheet resistance values.