Origin of crystallographic tilt in InGaAs/GaAs(001) heterostructure
作者:
J. M. Kang,
C. S. Son,
Moo‐Sung Kim,
Yong Kim,
Suk‐Ki Min,
C. S. Kim,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 5
页码: 641-643
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115188
出版商: AIP
数据来源: AIP
摘要:
X‐ray rocking curve measurements showed a significant crystallographic tilt in relaxed InGaAs layer grown on (001) GaAs. Transmission electron microscopy revealed that the origin of tilt is 60° dislocations generated having Burgers vectors of a same vertical edge component. Calculations using anisotropic elasticity show that this configuration of 60° dislocation array is energetically favorable when the tilt of epilayer is present as to remove the long range stress field induced by the vertical edge components at the interface. ©1995 American Institute of Physics.
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