The formation of nanostructures on silicon surfaces in the presence of hydrogen
作者:
O. Teschke,
D. M. Soares,
L. A. O. Nunes,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 21
页码: 2840-2842
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119055
出版商: AIP
数据来源: AIP
摘要:
The presence of hydrogen in HF solutions at a silicon substrate surface is shown to be sufficient to produce a photoluminescent porous silicon layer. The photoluminescence measurements of bubbled and anodized samples show similar spectra when illuminated with UV radiation. This is strong evidence that the hydrogen produced by the anodic silicon dissolution reaction is also responsible for the formation of nanostructures. ©1997 American Institute of Physics.
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