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The formation of nanostructures on silicon surfaces in the presence of hydrogen

 

作者: O. Teschke,   D. M. Soares,   L. A. O. Nunes,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 70, issue 21  

页码: 2840-2842

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119055

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The presence of hydrogen in HF solutions at a silicon substrate surface is shown to be sufficient to produce a photoluminescent porous silicon layer. The photoluminescence measurements of bubbled and anodized samples show similar spectra when illuminated with UV radiation. This is strong evidence that the hydrogen produced by the anodic silicon dissolution reaction is also responsible for the formation of nanostructures. ©1997 American Institute of Physics.

 

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