We explore the effect of forming gas anneals at 110 °C onE’centers in metal/oxide/semiconductor oxides subjected to gamma, electron, and vacuum ultraviolet irradiation, as well as high electric field stressing. We find that this brief low‐temperature anneal substantially reducesE’density in all cases, clearly demonstrating that hydrogen reacts readily with theE’sites. Although this work confirms a recent report of the reactivity ofE’and hydrogen we fail to detect the reported reaction product known as the 74‐G doublet.