Green electro- and photoluminescence from nanocrystalline Si film prepared by continuous waveAr+laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film
作者:
Mingxiang Wang,
Kunji Chen,
Lei He,
Wei Li,
Jun Xu,
Xinfan Huang,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 1
页码: 105-107
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121782
出版商: AIP
数据来源: AIP
摘要:
A thin layer of plasma enhanced chemical vapor deposited (PECVD) heavily phosphorus doped hydrogenated amorphous silicon(a-Si:H)film was annealed by cwAr+laser scanning. Different from conventionally prepared polycrystalline Si films, it was found that nanocrystalline Si (nc-Si) was formed in our laser annealed sample. Room-temperature green electroluminescence (EL) peaked at 530 nm was achieved from our nc-Si film. Photoluminescence (PL) from the same sample also shows the 530 nm green peak, in addition to the red peak located at 680 nm. The film had a rather high electrical conductivity of 10S/cm as well. The light emitting and highly conductive nc-Si film provides a new possibility to fabricate optoelectronic devices along with the well-developed laser annealing techniques ofa-Si:H.©1998 American Institute of Physics.
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