In this letter the formation of Ti silicide on thin‐film silicon on insulator has been investigated. The experimental results indicated that uniform TiSi2layers with a low sheet resistance of 4.0–4.5 &OHgr;/&laplac; can be formed on thin‐film silicon on insulator with a high carrier concentration of 2×1020/cm3. So a structure of Ti/n+‐Si/SiO2/Si can be obtained. Secondary‐ion mass spectrometer profiles of the As showed that a relatively homogeneous redistribution of the As in the TiSi2layer is revealed and the As pileup at Si/SiO2interface is noticeable when the thickness of the silicon overlayer after the TiSi2formation is less than 520 A˚.