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Influence of transmission resonance on carrier collection in a semiconductor quantum well

 

作者: Yasuhito Zohta,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 59, issue 3  

页码: 962-964

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.336572

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is pointed out that carrier collection in a quantum well becomes very effective when the quantum well thickness satisfies a transmission resonance condition. This is attributable to the fact that an electron wave dwells on the quantum well for a long time under resonance condition.

 

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