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Sputtering of refractory metal silicides from composite cathodes used in the Varian 3180/3190 sputtering system

 

作者: Dennis R. Nichols,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 4  

页码: 771-774

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582877

 

出版商: American Vacuum Society

 

关键词: SPUTTERING;MOLYBDENUM SILICIDES;TANTALUM SILICIDES;TITANIUM SILICIDES;THIN FILMS;ARGON;CATHODES;ELECTRIC CONDUCTIVITY;MoSi2;TaSi2;TiSi2

 

数据来源: AIP

 

摘要:

The techniques and procedures utilized to sputter the silicides of Mo, Ta, and Ti in a Varian 3180/3190TMsystem1are presented. The electrical resistivity of a thin film is a sensitive indicator of film purity and/or uniformity.2,3The affect of various system parameters on film resistivity is also presented. Variable parameters investigated included argon pressure, cathode power, sputtering rate, wafer temperature, and wafer bias.

 

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