首页   按字顺浏览 期刊浏览 卷期浏览 Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (&lgr;...
Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (&lgr;=0.98 &mgr;m) laser diodes

 

作者: G. Beister,   J. Maege,   D. Gutsche,   G. Erbert,   J. Sebastian,   K. Vogel,   M. Weyers,   J. Wu¨rfl,   O. P. Daga,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 68, issue 18  

页码: 2467-2468

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.115822

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The effect of (NH4)2Sxtreatment of the facet of InGaAs/AlGaAs ridge waveguide (RW) laser diodes on the nonradiative current and catastrophic optical damage (COD) level is reported. Using the power–voltage–current (P–V–I) characteristics of the electroluminescence at low injection levels, changes in the density of surface states at the laser facets are described. ©1996 American Institute of Physics.

 

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